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Marktech Optoelectronics has announced new high-efficiency 25µm diameter resonant cavity light emitting diodes (RCLEDs) with ...

The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...

Veeco Instruments has announced that the University of Michigan has published a breakthrough study on atomic layer deposition ...

French MBE firm Riber has signed a three-year collaboration with the Novo Nordisk Foundation Quantum Computing Programme ...

The resulting submicron LEDs, some as small as 250nm by 250nm, initially demonstrated promising electrical characteristics, ...

Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...

Photonics company Coherent has launched the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Key features of the QPA1722 include a frequency range of 17.7–20.2 GHz, 10W saturated output power (6W linear), 1 GHz ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...