Researchers from the University of Michigan built a memristor made from 2D layers of bismuth selenide (Bi 2 Se 3) in an Au/Bi ...
We present the results of an extensive analysis of 3 different elements (Si, Gd and Y) used as dopants for HfO2 in ferroelectric FET (FeFET). Firstly, the ferroelectric response of doped HfO2 has been ...
Abstract: In this study, we provide an insight into the polarization switching behavior of HfO2-based ferroelectric field-effect transistors (FeFETs) by utilizing the Landau-Ginzburg-Devonshire model ...
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