Tokyo – Renesas Technology Corp. has developed a new SRAM memory cell structure that combines SRAM and DRAM technologies. The device is about half the size of a conventional SRAM cell, but still has ...

TOKYO — Renesas Technology Corp. has developed a new SRAM memory cell combining SRAM and DRAM technologies. The new cell is about half the size of conventional SRAM cells but retains such advantages ...

Business owners should be mindful of the components that significantly affect the performance of their computers for efficiency in their businesses. One of such components is random-access memory, or ...

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For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...

Flash continues to dominate non-volatile memory (NVM), but it shares the storage space with volatile memory—including SRAM and DRAM that beat it in performance. However, other technologies are making ...

According to some niche SRAM and DRAM and TFT LCD driver IC design firms, increasing foundry utilization rates for high and low-end processing may limit their production and lead to higher prices.

Spin Transfer Technologies has developed vastly improved MRAM memory using its unique Precessional Spin Current (PSC™) structure. The results from advanced testing of the PSC structure confirm that it ...

At the 2019 Global Foundries Technology Conference (GTC) as well as at the 2019 AI Hardware Summit I found some interesting insights on the capabilities of today’s and tomorrow’s AI-enabled smart ...

FREMONT, Calif.--(BUSINESS WIRE)--Spin Transfer Technologies, Inc., the leading developer of advanced STT-MRAM for embedded SRAM and stand-alone DRAM applications, today announced results of its ...