Intelligent soft switching with AI support promises to reduce switching losses in power transistors by up to 95 per cent. Porsche Engineering is already ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
Researchers from the Delft University of Technology (TU Delft) have investigated how power electronics may be embedded in solar cells and proposed several design options for PV devices integrating ...
The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...
Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...
Finnish company Semiqon has developed a transistor that operates with virtually zero heat dissipation. They have made silicon-based quantum processors to make future quantum computers more affordable, ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
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It’s just an unavoidable fact: electronic components’ parameters drift with temperature. Even the most stable voltage references, op amps, crystal oscillators, etc., have non-zero temperature ...
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