SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of "3D ...
Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...
Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...
Macronix is releasing details of a new 3D NAND structure, called single-gate vertical channel (SGVC). The outfit will present a paper on the new tech at the 2017 IEEE International Electron Devices ...
The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
The NAND flash technology that Toshiba introduced in 1989, making thumb drives, SSDs and your smartphone’s memory possible, has finally reached a development dead end. Toshiba and other major ...
Intel took half a day this week to talk about processor manufacturing technology. The company still believes in Moore's Law and says the principle will continue to guide and shape the microchip ...
Scanning electron microscope imagery shows the magnetic "islands" of a new chip design. The islands are impervious to power loss. View Slideshow For the first time, researchers have created a working ...
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