Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

Memory chips, prices and AI infrastructure are now tightly linked as the global semiconductor market enters what industry leaders, including Synopsys CEO describe as a prolonged supply squeeze. The ...

A computer-memory device has been developed that can store one bit of information for 24 hours at 600 °C. This could advance computing in extreme environments, such as the scorching surface of Venus 1 ...

Illustration of the similarity between a CuMnAs-based antiferromagnetic analog memory device and a biological synapse. As electronic devices generate increasing amounts of waste heat, interest in ...

MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies. However, MRAM requires significant ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices designed for automotive ...

Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...

(Nanowerk Spotlight) The human brain processes complex information while consuming merely the power of a dim light bulb. This remarkable efficiency stems from synapses, the connections between brain ...