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Next-generation 3D DRAM approaches reality as scientists achieve 120-layer stack using advanced deposition techniques
Imagine trying to build a tower out of hundreds of very thin, slightly different sheets of material, where each sheet wants to bend or warp on its own. That’s essentially what researchers at imec and ...
Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...
Samsung has come out of the gate strong in 2024 by announcing it's developed a 12-layer version of the most cutting-edge high-bandwidth memory (HBM) available today, HBM3e. The development will move ...
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