Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...
Multiple innovations in semiconductor processing are needed to enable 3D NAND bit density increases of about 30% per year at ever-decreasing cost per bit, all of which will be required to meet the ...
3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D ...
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SanDisk's new High Bandwidth Flash memory enables 4TB of VRAM on GPUs, matches HBM bandwidth at higher capacity
SanDisk on Wednesday introduced an interesting new memory that could wed the capacity of 3D NAND and the extreme bandwidth enabled by high bandwidth memory (HBM). SanDisk's high-bandwidth flash (HBF) ...
Samsung Electronics Co has launched mass production of 286-layer NAND chips, enhancing storage capacity by 50%. Ninth-gen 3D NAND memory targets AI data centers, smartphones; samples shipped to Google ...
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