Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
Si, SiC, and GaN Unite in New Power-Supply Unit for AI Infineon's 8-kW reference design for data centers features Si, SiC, and GaN technologies to help quench AI’s thirst for power. A New Generation ...
Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...
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