In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

Alfred University alumnus Sandwip Dey, M.S. ’80, PhD ’84, professor of materials science and engineering at Arizona State ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A new technical paper titled “Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...

Carbon Nanotube Field-Effect Transistors (CNTFETs) represent a pivotal advancement in nanoelectronics, employing the extraordinary electrical properties of carbon nanotubes to achieve superior ...

The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...