The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

Transistors come in different flavors. Tubes used an electric field to regulate current flow, and researchers wanted to find something that worked the same way without the drawbacks like vacuum and ...

New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

PLANO, Texas, December 17, 2025--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the ...

The company’s first bipolar transistors in its miniature PowerDI5 surface-mount package are designed on a fifth-generation matrix emitter process, yielding a range of 12 NPN and PNP transistors with a ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...